CYRANNUS HE

Precision for heteroepitaxial diamond synthesis

Specially developed for high-precision heteroepitaxial diamond growth on wafers. Essential for state-of-the-art electronics and photonics.
 

Tailor-made for heteroepitaxial diamond growth on wafers

Specially developed for advanced heteroepitaxial diamond synthesis, it enables the production of high-quality diamond layers on various foreign substrates, including iridium (Ir) and silicon (Si) wafers, with high precision and uniformity. Crucial for next-generation semiconductor devices and special optical components.

• Highly homogeneous diamond coatings
• Precise control of layer thickness/properties
• Exceptional crystal quality
• Optimised for specific substratesScalable production 
   

Benefits of the CYRANNUS HE-Serie 

• High-quality diamond coatings: Superior films for state-of-the-art devices. 
• Efficient substrate utilisation: Maximum utilisation of expensive wafer materials. 
• Reproducible results: Consistent film properties for reliable manufacturing. 
• Scalable production: offers capacity for industrial wafer processing. 
• Customised properties: Control of material properties for specific device requirements.

Important applications of heteroepitaxial diamond synthesis 

• Semiconductor materials for high-performance electronics
• Optoelectronic components
• MEMS sensors
• UV detectorsHeat dissipation elements
   

Used, for example, at the University of Augsburg in the development of novel semiconductor materials.
 

Ready to advance your research and production of heteroepitaxial diamond?